New paper “Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range”
- Post by: Tatiana
- October 12, 2022
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Some new exciting results achieved by our researcher Emadreza Soltanian and the team in Ghent University have been published in the paper “Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range” , Optics Express, Vol. 30, Issue 22, pp. 39329-3933, https://doi.org/10.1364/OE.470497
Read below the statement from Emadreza:
I am thrilled to announce that we Photonics Research Group (Ghent University – imec) recently demonstrated for the first time, a narrow-linewidth III-V_on_Si widely tunable laser (WTL) with 110 nm of tunability over S+C+L-bands using micro-transfer-printing (uTP) integration technology. This is a stepping stone toward the realization of complex PICs with integrated lasers and semiconductor optical amplifiers (SOA), and to make Silicon Photonics’s (SiPh) foothold firm in a wide variety of applications and markets such as #CoherentOpticalCommunication and #datacenters, sensing and #spectroscopy, #LiDAR, deep learning, and quantum applications. We are going to work on further development with the integration of booster SOAs and a wavelength-locking system. I would like to thank all the partners and collaborators with the projects of ETN WON “Wideband Optical Networks”, MedPhab Pilot Line, and H2020-Caladan.